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Defense Intelligence Reference Document Metallic Spintronics

Defense Intelligence Agency · 27 pages · text from the file's own layer

This Defense Intelligence Reference Document, dated 23 March 2010 and produced by the Defense Intelligence Agency under its Advanced Aerospace Weapon System Applications (AAWSA) program, is a technical report on metallic spintronics. It explains giant magnetoresistance, spin-transfer torque and antiferromagnetic spintronics, along with their uses in sensors, hard drive read heads and magnetic memory. It concludes that spintronic devices could enable low-power, radiation-resistant electronics suited to aerospace and long space missions.

  • p. 1 …UNCLASSIFIED/f P911 8PPIGIAL tlSC OIIL I Defense Intelligence Reference Document Acquisition Threat Support Metallic Spintronics
  • p. 2 UNCLASSIFIED/ 'FOR OFFICI0PI Metallic Spintronics Prepared by: (b)(3):10 USC 424 gency Author: Administrative Note…
  • p. 3 …Antiferromagnetic Metal Sl)lntro..nics ......................................................................•...... 12 4.1 Antiferromagnetic GMR ............................................................................. 13 4. 2 Antlferromag netlc STT…
  • p. 4 UNCLASSIFIED//EOR AEEJCJOP !PSF ON!~ Metallic Spintronics 1. Introduction The rapid pace of progress in the…
  • p. 5 …This report focuses on splntronics research in metal lie systems within the scope of the second…
  • p. 9 …nm) are formed when a sharpened Cu metal wire (tip) is carefully brought into contact with…
  • p. 10 …Consider a pedagogically simple case where a conduction electron crosses an interface between a nonmagnetic metal…
  • p. 16 …drive a transition from MTJs to fully metallic spin-valve storage elements. The switching between \\1…
  • p. 17 …WALLS Yet another manifestation of STT in metallic ferromagnets is a motion of magnetic domain walls…
  • p. 18 …Replacing F metals with AFM metals in a spintronic device has several advantages. While AGMR of…
  • p. 19 …Nm2 into an EBSV film with a metallic AFM. Dai et aL (Reference 94) sent an…
  • p. 22 …Potentially all logic operations on a chip could be carried out by manipulating spins in metallic…
  • p. 23 UNCLASSIFIED/ (FOR OFFIGili r L WEE 8HLV Finally, metallic spintronics and its applications discussed in this…
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Contents
1. Introduction .......................................................................................................... iv
2. Giant Mag netoresistance ..................................................................................... 1
2.1 GMR Basics ••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••••• !!1••···························· 1
2.2 GM.R Applications .........................................~ .......................... ., ........................ 3
3. Spin-Transfer-Torque ......................................................................................... 4
3.1 STT. Basics .................................................................................................................. 4
3.2 STT Experiments ..................................................................................................................... 7
3. 3 STT Appllcat~ons ........................................................................................... 10
3,4 STT-Driven Motion of Magnetic Domain Walls ........................................... 12
4. Antiferromagnetic Metal Sl)lntro..nics ......................................................................•...... 12
4.1 Antiferromagnetic GMR ............................................................................. 13
4. 2 Antlferromag netlc STT................................................."' .................................... 14
5 .. Summary and Conclusion~ ................................................................................... 16
6 .. References .................... ,.................................................................................................. 18
Figures
Figure 1. In a Magnetic Multilayer, Several Atomic Layers of Magnetic Material
Alternate With Layers of Nonmagnetic Material ...................................... 1
Figure 2. Resistance of a Magnetic Multilayer R Versus Magnetic Field .................. 2
Figure 3. Differential Resistance dV/dl of a Mechanical Point Contact as a Fur,ction
of Current for a Series of Magnetic Fields................................................ 4
Figure 4. Device Schematics for STT Experiments ................................................. .
Figure 5. Qualitative Picture of STT ....................................................................................
Figure 6. Torques on a Magnetic Moment In a Magnetic Field and Subject to an
5
6
Electrical Current ....................................................................................... 7
Figure 7. Spin-Torque-Driven Magnetic Switching .................................................. 8
figure 8. Oscillatory Voltage .............................................................................................. 9
Figure 9. Scanning Transmission X-ray Microscopy Images ................................. 10
Figure 10. Conventional MRAM. Cell .............................................................................. 11
Flgu re 11. Racetrack Memory Co nee.pt .................................................................... 12
Figure 12. Schematic of Point Contact to Sample Geometry ................................. 15
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Report, from the dia collection. The PDF is mirrored here; the original link is under it. 27 pages are in the text index: search them above, or from the library's search.